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SK-LVCMOS-BIDI-IO-T016FFC
Sankalp
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Sankalp Semiconductor offers SSLVCMOSBIDI_IO_T016FFC general purpose IOs targeted for TSMC 16nm FFC process (7-2-2Metal Option). It uses SVT/LVT thin-oxide 1.0 V and 1.8 V transistors with no deep N-well requirement .It operates on a core supply of 0.8 / 1.0 V and I/O supply of 1.8.This Contains LVCMOS Bidirectional IO cell (lvcmos18) and open drain pad (lvcmos81_od). All cells are power supply sequence independent.

  • Implemented in TSMC 16FFC process
  • Uses SVT,LVT devices for operation under both core and IO supply
  • Intended for flip-chip packages
  • Compatible with both IEEE General Purpose LVDS
  • Powered from 1.8V +/- 7.5% IO supply and 0.8V +/- 10% or 1.0V -10% & +5% Core supply
  • Operates in junction temperature ranges from -40 to 125 degree Celsius
  • No power supply sequencing restrictions
  • ESD immunity of 2KV HBM, 250V (5A) CDM and +/- 100mA current injection for latch up
  • The cells operate with 1.8V supply only. There is just one cell, which is “lvcmos18_od”, which will be targeted to be 3.3V (over voltage) tolerant but not overdrive
  • All Outputs (PAD) are tri-stated when core voltage is low and core signals (CIN) will drive low when IO voltage is not available
  • All signal cells have a programmable pull-up or pull-down of 10K-Ohms/40K-Ohms.
  • For driving LED's the MODE [1:0] bits of the lvcmos18_od must be set to '11' to get max. DC current capability (=12mA) for a 10 year continuous operation

Summary

Catalog ID

SK-LVCMOS-BIDI-IO-T016FFC

IP Provider

design house

Designer

Sankalp

Type

Hard IP

Node

16nm

Vendor

Sankalp

Foundry

TSMC

Process

FFC

Category

General Purpose I/O

Certifications

icon

Licensing

Info

Contact Designer

Maturity

Stage

product

# of Tries

0

Library Package

Version

1.0

Version Date

Oct 01, 2018