Process: GLOBALFOUNDRIES 0.13μm 3.3V/1.2V 1P6/7/8M Logic Process

Efficiency: 92% when IOUT=200mA (AVDD/PVDD=3.3V, considering the 100mΩ parasitic resistance of PVDD and PGND respectively, 300mΩ parasitic resistance of AVDD and AGND respectively and 100mΩ ESR of external inductor; if the parasitic resistance because of bonding, lead frame, PCB trace and ESR of external inductor is smaller, the efficiency will be higher.)

Input Voltage: 2.7~3.6V

Output Voltage: 1.2V

Max Output Current: 200mA

Oscillation Frequency: ~1MHz

Over Current Protected: ~470mA

Standby Current: <250μA when E=AVDD/PVDD,IOUT=0A

Shut Down Current: <8μA when E=0V

Soft Start-up Time: max 0.8ms from active E to VOUT=1.2V

External inductor: 4.7μH with DCR lower than 100mΩ

External Output Capacitor: >4.7μF with ESR from 0 to 50mΩ

External Input Capacitor: >4.7μF with low ESR

Operating Junction Temperature: -40°C~+25°C~+125°C

Area: 800*929 μm2